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Samsung Electronics

2 articles

Why tunneling inside V-NAND matters during erase stress

db#4850

Samsung looks inside flash memory when erase stress goes too far

A new V-NAND flash memory paper is not chasing a marketing capacity record; it is looking at a deeper cell-level problem that appears when erase conditions are pushed too far.

26 May 2026

Samsung memory bonus dispute exposes a wider chip-division rift

SocietyRewritten

db#4720

Samsung’s bonus fight is spilling into the AI-chip supply line

Samsung’s bonus dispute no longer looks like an accounting footnote; it is turning into an operational problem for the chip supply chain behind AI hardware.

23 May 2026